SI5515DC-T1-E3
MOSFET N/P-CH 20V 4.4A/3A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5515DC-T1-E3 is an N and P-channel MOSFET array housed in an 8-SMD, Flat Leads (1206-8 ChipFET™) package. This device features a 20V drain-source breakdown voltage and continuous drain currents of 4.4A for the N-channel and 3A for the P-channel at 25°C. The TrenchFET® technology ensures low on-resistance, specified at 40mOhm maximum at 4.4A and 4.5V Vgs. With a logic-level gate, it operates efficiently with lower gate voltages. Key parameters include a maximum gate charge of 7.5nC at 4.5V and a threshold voltage of 1V maximum at 250µA. The component has a maximum power dissipation of 1.1W and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management and switching within the consumer electronics and industrial automation sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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