SI5513DC-T1-E3
MOSFET N/P-CH 20V 3.1A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5513DC-T1-E3 is a TrenchFET® series MOSFET array featuring N and P-channel configurations. This 20V device offers a continuous drain current of 3.1A for the N-channel and 2.1A for the P-channel, both at 25°C. The Rds On is a maximum of 75mOhm at 3.1A and 4.5V for the N-channel. Designed for logic-level gate drive, it has a gate charge of 6nC maximum at 4.5V. The component is housed in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ format, suitable for surface mounting. Its maximum power dissipation is 1.1W, with an operating temperature range of -55°C to 150°C. This MOSFET array finds application in power management, battery-powered devices, and consumer electronics. The device is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
