SI5511DC-T1-E3
MOSFET N/P-CH 30V 4A/3.6A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI5511DC-T1-E3 is a MOSFET array featuring N-channel and P-channel configurations in a 1206-8 ChipFET™ package. This surface-mount device offers a Drain to Source Voltage (Vdss) of 30V with continuous drain currents of 4A for the N-channel and 3.6A for the P-channel at 25°C. Key parameters include a maximum Rds On of 55mOhm at 4.8A, 4.5V for the N-channel, and a maximum power dissipation of 3.1W and 2.6W respectively. It features a logic level gate with a gate charge (Qg) of 7.1nC at 5V and input capacitance (Ciss) of 435pF at 15V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, battery charging, and load switching applications across industrial and automotive sectors. It is supplied in Tape & Reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 2.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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