SI5509DC-T1-E3
MOSFET N/P-CH 20V 6.1A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI5509DC-T1-E3 is a TrenchFET® series N and P-channel MOSFET array with a 20V drain-to-source voltage. This device offers a continuous drain current of 6.1A for the N-channel and 4.8A for the P-channel, with a maximum power dissipation of 4.5W. Key electrical characteristics include a typical Rds(On) of 52mOhm at 5A and 4.5V Vgs, and a low gate charge of 6.6nC at 5V Vgs. Featuring logic level gate drive, this MOSFET array is housed in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™, and is supplied on tape and reel. It is suitable for surface mount applications and operates across a temperature range of -55°C to 150°C. This component finds application in power management solutions for consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A, 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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