SI5504DC-T1-GE3
MOSFET N/P-CH 30V 2.9A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI5504DC-T1-GE3 is a MOSFET array featuring N-channel and P-channel devices within a single 1206-8 ChipFET™ package. This surface-mount component offers a drain-source voltage (Vdss) of 30V and continuous drain current capabilities of 2.9A for the N-channel and 2.1A for the P-channel, with a maximum power dissipation of 1.1W. The N-channel MOSFET exhibits a low on-resistance (Rds On) of 85mOhm at 2.9A and 10V, and a Vgs(th) of 1V at 250µA. Designed with logic-level gate drive, it is suitable for applications in power management, battery controls, and portable electronics. The device operates across a temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |