SI5504DC-T1-E3
MOSFET N/P-CH 30V 2.9A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI5504DC-T1-E3 is a TrenchFET® series MOSFET array featuring N-channel and P-channel configurations. This device offers a Drain-to-Source Voltage (Vdss) of 30V with continuous drain currents of 2.9A for the N-channel and 2.1A for the P-channel at 25°C. The Rds On is specified at 85mOhm maximum for the N-channel at 2.9A and 10V Vgs. It is designed with a logic level gate and has a gate charge (Qg) of 7.5nC maximum at 10V. The SI5504DC-T1-E3 is housed in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™, and is supplied on tape and reel. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this component is suitable for applications in power management, battery charging, and general-purpose switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
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