SI5504BDC-T1-GE3
MOSFET N/P-CH 30V 4A/3.7A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI5504BDC-T1-GE3 is a TrenchFET® series N-channel and P-channel MOSFET array designed for demanding applications. This device features a 30V drain-to-source voltage rating and continuous drain currents of 4A for the N-channel and 3.7A for the P-channel configuration at 25°C. With a low Rds(on) of 65mOhm maximum at 3.1A and 10V, it minimizes conduction losses. The logic level gate feature allows for direct drive from low-voltage controllers. Key parameters include a maximum gate charge of 7nC at 10V and input capacitance of 220pF at 15V. The SI5504BDC-T1-GE3 is packaged in an 8-SMD, Flat Leads (1206-8 ChipFET™) format, suitable for surface mounting and rated for a maximum power dissipation of 3.12W and 3.1W. It operates across a temperature range of -55°C to 150°C. This component finds application in power management, battery charging, and general-purpose switching in consumer electronics and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.12W, 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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