SI5504BDC-T1-E3
MOSFET N/P-CH 30V 4A/3.7A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5504BDC-T1-E3 is a TrenchFET® series MOSFET array featuring N and P-channel configurations. This device offers a 30V drain-to-source voltage capability with continuous drain currents of 4A for the N-channel and 3.7A for the P-channel at 25°C. The power dissipation is rated at 3.12W and 3.1W respectively. Key electrical parameters include a maximum Rds On of 65mOhm at 3.1A and 10V for the N-channel. It operates with a logic-level gate and exhibits a gate charge (Qg) of 7nC at 10V and input capacitance (Ciss) of 220pF at 15V. The SI5504BDC-T1-E3 is supplied in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ footprint, suitable for surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.12W, 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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