SI4992EY-T1-E3
MOSFET 2N-CH 75V 3.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4992EY-T1-E3 is a 75V, dual N-channel MOSFET array designed for efficient power management. This component features a low Rds(on) of 48mOhm at 4.8A and 10V Vgs, contributing to reduced conduction losses. With a continuous drain current of 3.6A and a maximum power dissipation of 1.4W, it is suitable for applications requiring moderate power handling. The device operates over a wide temperature range of -55°C to 175°C. Its logic-level gate gate drive capability simplifies control circuitry. Packaged in an 8-SOIC (0.154" width) for surface mounting, the SI4992EY-T1-E3 is supplied on tape and reel. This MOSFET array finds application in power distribution, battery management, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 4.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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