SI4974DY-T1-E3
MOSFET 2N-CH 30V 6A/4.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI4974DY-T1-E3 is a dual N-channel MOSFET array with a 30V drain-source voltage rating. This component offers continuous drain currents of 6A and 4.4A at 25°C, with a maximum power dissipation of 1.1W. It features a logic-level gate for enhanced drive flexibility and a low on-resistance of 19mOhm at 8A and 10V. The device is supplied in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge of 11nC at 4.5V and a gate threshold voltage of 3V at 250µA. This MOSFET array is suitable for applications in power management, battery-powered systems, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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