SI4973DY-T1-GE3
MOSFET 2P-CH 30V 5.8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI4973DY-T1-GE3, features a 30V drain-source breakdown voltage and a continuous drain current capability of 5.8A at 25°C. This dual P-channel device is housed in an 8-SOIC package and offers a low on-resistance of 23mOhm at 7.6A and 10V Vgs. The MOSFET array is designed with a logic-level gate, a maximum gate charge of 56nC at 10V, and a maximum power dissipation of 1.1W. Its surface mount configuration and operating temperature range of -55°C to 150°C make it suitable for applications in automotive, industrial power control, and battery management systems. The component is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |