SI4973DY-T1-E3
MOSFET 2P-CH 30V 5.8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4973DY-T1-E3 is a TrenchFET® series dual P-channel MOSFET array. This 8-SOIC packaged component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.8A at 25°C. The device features a low Rds(on) of 23mOhm at 7.6A and 10V, and a gate charge (Qg) of 56nC maximum at 10V. With a maximum power dissipation of 1.1W and a logic level gate feature, this MOSFET array is suitable for applications in power management and automotive systems. The operating temperature range is -55°C to 150°C. This component is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
