SI4972DY-T1-GE3
MOSFET 2N-CH 30V 10.8A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4972DY-T1-GE3 is a dual N-channel Power MOSFET designed for efficient power management applications. This device features a Vds of 30V and continuous drain current ratings of 10.8A and 7.2A at 25°C for the two channels respectively. The low Rds(on) of 14.5mOhm at 6A and 10V, coupled with maximum power dissipation of 3.1W and 2.5W, ensures minimal conduction losses. Key electrical parameters include a gate charge (Qg) of 28nC at 10V and input capacitance (Ciss) of 1080pF at 15V. The SI4972DY-T1-GE3 is supplied in an 8-SOIC package for surface mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics for power switching and load management. The component is delivered in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.8A, 7.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |