SI4972DY-T1-E3
MOSFET 2N-CH 30V 10.8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4972DY-T1-E3 is a dual N-channel MOSFET array. It features a Drain-Source Voltage (Vdss) of 30V and continuous drain current ratings of 10.8A and 7.2A at 25°C. The device offers a low on-resistance of 14.5mOhm maximum at 6A and 10V. With a gate charge of 28nC maximum at 10V and input capacitance of 1080pF maximum at 15V, this MOSFET array is suitable for power management applications. The power dissipation is rated at 3.1W and 2.5W. It is supplied in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial automation systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.8A, 7.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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