SI4967DY-T1-GE3
MOSFET 2P-CH 12V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI4967DY-T1-GE3, is a dual P-channel device designed for high-efficiency power switching applications. This 12V device features a low Rds(on) of 23mOhm at 7.5A and 4.5V Vgs, contributing to minimal conduction losses. The logic-level gate facilitates direct driving from lower voltage microcontrollers. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, it is suitable for demanding environments. The device is housed in an 8-SOIC package, supplied on tape and reel. Key specifications include a gate charge of 55nC at 10V and a threshold voltage of 450mV at 250µA. This component finds application in battery management systems, portable electronics, and power supply units.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |