SI4967DY-T1-E3
MOSFET 2P-CH 12V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array, TrenchFET® series, part number SI4967DY-T1-E3. This device features a 12V Drain-to-Source Voltage (Vdss) and is configured as two P-Channel MOSFETs. The logic level gate enhances control flexibility. With a maximum power dissipation of 2W and a low Rds(on) of 23mOhm at 7.5A and 4.5V, it is suitable for high-efficiency switching applications. The gate charge (Qg) is specified at a maximum of 55nC at 10V. This component is housed in an 8-SOIC package, suitable for surface mounting. It operates across a broad temperature range from -55°C to 150°C. The SI4967DY-T1-E3 is commonly utilized in power management, consumer electronics, and automotive applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |