SI4966DY-T1-E3
MOSFET 2N-CH 20V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4966DY-T1-E3 is a dual N-channel MOSFET array designed for efficient power switching. Featuring a 20V drain-source voltage rating and a low Rds(on) of 25mOhm at 7.1A and 4.5V, this component is optimized for high-density power management applications. The device utilizes a logic-level gate drive, simplifying interface requirements with lower voltage control signals. With a continuous drain current capability and a maximum power dissipation of 2W in its 8-SOIC package, the SI4966DY-T1-E3 is suitable for use in automotive, industrial, and consumer electronics where space and performance are critical. The 8-SOIC package is supplied on tape and reel for automated assembly processes. Key electrical parameters include a gate charge of 50nC at 4.5V and a threshold voltage of 1.5V at 250µA. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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