SI4965DY-T1-GE3
MOSFET 2P-CH 8V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4965DY-T1-GE3 is a TrenchFET® P-channel MOSFET array designed for efficient power management in applications such as battery-powered devices and portable electronics. This component features a drain-source voltage (Vdss) of 8V and a low on-resistance (Rds On) of 21mOhm at 8A and 4.5V Vgs, ensuring minimal power loss. The device is configured as two P-channel MOSFETs, each with a gate charge (Qg) of 55nC at 4.5V and a gate threshold voltage (Vgs(th)) of 450mV at 250µA. With a continuous drain current capability and a maximum power dissipation of 2W, it is suitable for surface mount integration in an 8-SOIC package. The operating temperature range is -55°C to 150°C, and it is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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