SI4963BDY-T1-GE3
MOSFET 2P-CH 20V 4.9A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array, part number SI4963BDY-T1-GE3, features two P-channel MOSFETs in a single 8-SOIC package. This device offers a 20V drain-to-source voltage (Vdss) and supports a continuous drain current of 4.9A at 25°C. The low Rds(On) of 32mOhm at 6.5A and 4.5V gate drive, coupled with its logic-level gate feature, makes it suitable for various power management applications. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this component is designed for reliable performance in demanding environments. The SI4963BDY-T1-GE3 is commonly utilized in consumer electronics and industrial automation systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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