SI4963BDY-T1-E3
MOSFET 2P-CH 20V 4.9A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix presents the SI4963BDY-T1-E3, a dual P-channel MOSFET array designed for demanding applications. This component features a 20V Vds rating and a continuous drain current capability of 4.9A at 25°C. The 32mOhm maximum Rds(On) at 6.5A and 4.5V Vgs ensures efficient power switching. With a logic level gate, it offers compatibility with lower voltage control signals. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) format for surface mounting and is supplied on tape and reel. Key electrical parameters include a maximum gate charge of 21nC at 4.5V and a threshold voltage of 1.4V at 250µA. This MOSFET array is suitable for use in power management and switching circuits across various industrial sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
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