SI4953ADY-T1-GE3
MOSFET 2P-CH 30V 3.7A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4953ADY-T1-GE3 is a dual P-channel Power MOSFET designed for efficient power management. This device features a 30V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 3.7A at 25°C. The MOSFET array offers a low Rds(on) of 53mOhm maximum at 4.9A and 10V Vgs, contributing to reduced conduction losses. With a Power (Max) rating of 1.1W and a Logic Level Gate feature, it is suitable for applications requiring low-voltage drive. The 8-SOIC (0.154", 3.90mm Width) surface mount package, supplied in Cut Tape (CT), facilitates automated assembly. This component finds application in automotive and industrial power switching scenarios.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |