SI4952DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4952DY-T1-GE3 TrenchFET® series 2 N-channel MOSFET array. This component features a 25V drain-source voltage and 8A continuous drain current at 25°C. The device offers a low Rds(on) of 23mOhm at 7A and 10V, with a logic level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 18nC maximum at 10V and input capacitance (Ciss) of 680pF maximum at 13V. The 2.8W power dissipation and an operating temperature range of -55°C to 150°C make it suitable for demanding applications. Packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration, this device is delivered on tape and reel. It finds application in power management, automotive electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 13V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |