SI4947ADY-T1-GE3
MOSFET 2P-CH 30V 3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4947ADY-T1-GE3 TrenchFET® power MOSFET array. This device features two P-channel MOSFETs in a complementary configuration, each rated for 30V drain-source voltage and a continuous drain current of 3A at 25°C. The Rds(On) is specified at 80mOhm maximum for a drain current of 3.9A and gate-source voltage of 10V. With a logic-level gate drive, it exhibits a maximum gate charge of 8nC at 5V. The MOSFET array is housed in an 8-SOIC package with a surface mount configuration and operates within a junction temperature range of -55°C to 150°C. This component is commonly utilized in power management applications across various industries. The device is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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