SI4947ADY-T1-E3
MOSFET 2P-CH 30V 3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4947ADY-T1-E3 is a TrenchFET® power MOSFET array featuring two P-channel transistors in an 8-SOIC package. This device offers a continuous drain current of 3A at 25°C and a drain-to-source voltage of 30V. The low on-resistance of 80mOhm at 3.9A and 10V, combined with a logic level gate, makes it suitable for applications requiring efficient power switching. With a maximum power dissipation of 1.2W and an operating temperature range of -55°C to 150°C, this MOSFET array is designed for demanding power management solutions. Key parameters include a gate charge of 8nC at 5V and a threshold voltage of 1V at 250µA. The component is supplied in tape and reel packaging for automated assembly. This component is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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