SI4946CDY-T1-GE3
MOSFET 2N-CH 60V 5.2A/6.1A 8SOManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4946CDY-T1-GE3 is a TrenchFET® series n-channel MOSFET array. This component features a 60V drain-to-source voltage (Vdss) and supports continuous drain current ratings of 5.2A at ambient temperature (Ta) and 6.1A at case temperature (Tc). The device offers a maximum power dissipation of 2W (Ta) or 2.8W (Tc). Its low on-resistance of 40.9mOhm at 5.2A and 10V (Vgs) combined with a gate charge (Qg) of 10nC (max) makes it suitable for efficient power switching applications. The input capacitance (Ciss) is a maximum of 350pF at 30V (Vds). Packaged in an 8-SOIC (0.154"", 3.90mm Width) surface mount configuration and supplied on tape and reel (TR), this Vishay Siliconix MOSFET array is utilized in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta), 2.8W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 6.1A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
| Rds On (Max) @ Id, Vgs | 40.9mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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