SI4946BEY-T1-GE3
MOSFET 2N-CH 60V 6.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4946BEY-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 6.5A at 25°C. With a low on-resistance of 41mOhm at 5.3A and 10V, it minimizes conduction losses. The logic level gate allows for direct drive from low-voltage microcontrollers, simplifying system design. Key parameters include a gate charge (Qg) of 25nC (max) and input capacitance (Ciss) of 840pF (max). The device is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 175°C. Its robust construction and performance characteristics make it suitable for use in automotive, industrial, and consumer electronics power management systems. The SI4946BEY-T1-GE3 is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.7W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 5.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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