SI4946BEY-T1-E3
MOSFET 2N-CH 60V 6.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4946BEY-T1-E3 is a dual N-channel MOSFET array from the TrenchFET® series, housed in a compact 8-SOIC package. This device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 6.5A at 25°C. Featuring a logic-level gate, it facilitates efficient switching with a maximum on-resistance (Rds On) of 41mOhm at 5.3A and 10V. The device supports a maximum power dissipation of 3.7W and operates across a wide temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 25nC max at 10V and input capacitance (Ciss) of 840pF max at 30V. This MOSFET array is commonly employed in power supply circuits, battery management, and automotive applications. The SI4946BEY-T1-E3 is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.7W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 5.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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