SI4944DY-T1-GE3
MOSFET 2N-CH 30V 9.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI4944DY-T1-GE3. This dual N-channel power MOSFET features a 30V drain-source voltage and a continuous drain current capability of 9.3A at 25°C. The device offers a low Rds(On) of 9.5mOhm at 12.2A and 10V, with a logic level gate suitable for low-voltage drive applications. It is packaged in a standard 8-SOIC (0.154", 3.90mm width) surface mount configuration, supplied on tape and reel. Key parameters include a maximum power dissipation of 1.3W and a gate threshold voltage of 3V at 250µA. This component is utilized in power management solutions across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 12.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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