SI4943BDY-T1-GE3
MOSFET 2P-CH 20V 6.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4943BDY-T1-GE3 is a TrenchFET® power MOSFET featuring a dual P-channel configuration. This component is rated for a 20V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 6.3A at 25°C. The device offers low Rds(on) of 19mOhm maximum at 8.4A and 10V Vgs, with a gate charge (Qg) of 25nC maximum at 5V. Designed with a logic level gate, it is suitable for applications requiring efficient power switching. The SI4943BDY-T1-GE3 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount form factor and operates across a temperature range of -55°C to 150°C. Its power dissipation capability is 1.1W. This MOSFET array finds application in power management and switching circuits across various industries. It is supplied on tape and reel for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 8.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
