SI4943BDY-T1-E3
MOSFET 2P-CH 20V 6.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4943BDY-T1-E3 is a 2 P-channel MOSFET array designed for efficient power management. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 6.3A at 25°C. The array offers a low on-resistance of 19mOhm at 8.4A and 10V, contributing to reduced conduction losses. With a logic-level gate, it is suitable for direct control by microcontrollers. The Vishay Siliconix SI4943BDY-T1-E3 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, delivering 1.1W of maximum power dissipation. Its operating temperature range is -55°C to 150°C. This component finds application in various industries including automotive and industrial automation. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 8.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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