SI4941EDY-T1-E3
MOSFET 2P-CH 30V 10A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4941EDY-T1-E3 is a 2 P-channel MOSFET array housed in an 8-SOIC package. This component offers a continuous drain current of 10A and a drain-to-source voltage of 30V. Featuring logic-level gate drive, it presents a maximum Rds(on) of 21mOhm at 8.3A and 10V. The device has a gate charge of 70nC at 10V and a maximum power dissipation of 3.6W. Engineered for surface mounting, this Vishay Siliconix MOSFET array is suitable for applications in automotive and industrial power management. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.6W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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