SI4940DY-T1-GE3
MOSFET 2N-CH 40V 4.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4940DY-T1-GE3, a dual N-channel MOSFET array from the TrenchFET® series, offers a 40V drain-source voltage and a continuous drain current capability of 4.2A at 25°C. This surface-mount component, housed in an 8-SOIC package, features a low Rds(on) of 36mOhm at 5.7A and 10V, contributing to efficient power management with a maximum power dissipation of 1.1W. The logic-level gate design simplifies drive requirements, and its low gate charge of 14nC at 10V aids in high-frequency switching applications. Operating across a wide temperature range of -55°C to 150°C, this device is suitable for power management solutions in automotive, industrial, and consumer electronics. Supplied in Tape & Reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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