SI4940DY-T1-E3
MOSFET 2N-CH 40V 4.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4940DY-T1-E3 is a 2 N-Channel MOSFET array in an 8-SOIC package. This device offers a 40V drain-source voltage and a continuous drain current of 4.2A at 25°C. Key features include a logic level gate, a low Rds(on) of 36mOhm at 5.7A and 10V, and a maximum power dissipation of 1.1W. The device exhibits a gate charge (Qg) of 14nC at 10V. Operating temperature range is from -55°C to 150°C. This component is suitable for applications in power management and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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