SI4936BDY-T1-GE3
MOSFET 2N-CH 30V 6.9A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4936BDY-T1-GE3 is a TrenchFET® power MOSFET array featuring two N-channel devices in a compact 8-SOIC package. This component offers a 30V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of 6.9A at 25°C. The low on-resistance (Rds On) of 35mOhm at 5.9A and 10V Vgs, coupled with a logic level gate, makes it suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 15nC (max) at 10V and input capacitance (Ciss) of 530pF (max) at 15V. With a maximum power dissipation of 2.8W and an operating temperature range of -55°C to 150°C, this MOSFET array finds utility in various industrial and automotive power management solutions. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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