SI4936BDY-T1-E3
MOSFET 2N-CH 30V 6.9A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI4936BDY-T1-E3 is a 30V, 2 N-channel MOSFET array in an 8-SOIC package. This device features a continuous drain current (Id) of 6.9A at 25°C and a low Rds(on) of 35mOhm maximum at 5.9A and 10V, utilizing logic-level gate technology. With a gate charge (Qg) of 15nC maximum at 10V and input capacitance (Ciss) of 530pF maximum at 15V, this MOSFET array is suitable for power management applications. The device operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 2.8W. It is commonly employed in automotive and industrial power control systems. The SI4936BDY-T1-E3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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