SI4936ADY-T1-GE3
MOSFET 2N-CH 30V 4.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4936ADY-T1-GE3 is a TrenchFET® series power MOSFET array featuring two N-channel devices in a compact 8-SOIC package. This surface-mount component offers a 30V drain-source voltage capability and a continuous drain current rating of 4.4A at 25°C. The MOSFETs are designed with a logic-level gate for enhanced compatibility with lower voltage drive signals. Key electrical parameters include a maximum Rds(On) of 36mOhm at 5.9A and 10V, and a gate charge (Qg) of 20nC at 10V. With a power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, this component is suitable for applications in power management, battery charging, and consumer electronics. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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