SI4933DY-T1-GE3
MOSFET 2P-CH 12V 7.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array, part number SI4933DY-T1-GE3, features a 12V drain-to-source voltage and a continuous drain current of 7.4A at 25°C. This dual P-channel device is housed in an 8-SOIC package and is designed for surface mount applications. Key specifications include a maximum power dissipation of 1.1W and a low Rds(On) of 14mOhm at 9.8A and 4.5V Vgs. The logic level gate input has a gate charge of 70nC at 4.5V, with a threshold voltage of 1V at 500µA. Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and industrial power management. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 500µA |
| Supplier Device Package | 8-SOIC |
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