SI4933DY-T1-E3
MOSFET 2P-CH 12V 7.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4933DY-T1-E3 is a TrenchFET® series power MOSFET, featuring a dual P-channel configuration. This surface-mount component offers a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) capability of 7.4A at 25°C. With a low on-resistance (Rds On) of 14mOhm at 9.8A and 4.5V Vgs, it minimizes conduction losses. The logic level gate feature simplifies driving from lower voltage microcontrollers. This device is suitable for applications requiring efficient power switching in the consumer electronics and industrial automation sectors. It is supplied in a space-saving 8-SOIC package on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 500µA |
| Supplier Device Package | 8-SOIC |
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