SI4931DY-T1-E3
MOSFET 2P-CH 12V 6.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4931DY-T1-E3 TrenchFET® MOSFET Array features two P-channel devices in a 12V, 6.7A configuration. This 8-SOIC surface mount component offers a low Rds(on) of 18mOhm at 8.9A and 4.5V, combined with a logic level gate for enhanced drive flexibility. With a maximum power dissipation of 1.1W and key parameters like 52nC gate charge, this MOSFET array is engineered for efficient switching in power management applications. Its operating temperature range of -55°C to 150°C makes it suitable for demanding environments across various industries including automotive and industrial automation. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 350µA |
| Supplier Device Package | 8-SOIC |
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