SI4925BDY-T1-GE3
MOSFET 2P-CH 30V 5.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4925BDY-T1-GE3 is a TrenchFET® series power MOSFET array featuring 2 P-channel devices in a single 8-SOIC package. This surface-mount component offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.3A at 25°C. With a low on-resistance (Rds On) of 25mOhm at 7.1A and 10V, and a maximum power dissipation of 1.1W, it is suitable for applications requiring efficient power switching. The logic-level gate feature simplifies drive requirements. This MOSFET array is commonly utilized in power management, battery charging, and consumer electronics. The device is supplied on a tape and reel for efficient automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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