SI4925BDY-T1-E3
MOSFET 2P-CH 30V 5.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4925BDY-T1-E3 TrenchFET® power MOSFET array, featuring a 2 P-Channel configuration. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C. With a low Rds(On) of 25mOhm at 7.1A and 10V, it minimizes conduction losses. The device operates with a logic level gate, facilitating compatibility with lower voltage control signals. Its 8-SOIC package is suitable for surface mounting applications. Typical industries utilizing this component include automotive and industrial power management. The maximum power dissipation is rated at 1.1W, and it operates within an ambient temperature range of -55°C to 150°C. This device is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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