SI4923DY-T1-E3
MOSFET 2P-CH 30V 6.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4923DY-T1-E3 is a dual P-channel Power MOSFET array designed for efficient power management applications. This component features a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of 6.2A at 25°C. The low on-resistance of 21mOhm at 8.3A and 10V (Rds On) minimizes conduction losses. The logic-level gate ensures compatibility with a wide range of control signals. Fabricated using advanced MOSFET technology, this device offers a maximum power dissipation of 1.1W. The 8-SOIC package, suitable for surface mounting, is supplied on tape and reel. The SI4923DY-T1-E3 is commonly employed in battery management, power switching, and load control circuits across various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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