SI4922BDY-T1-GE3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET array, part number SI4922BDY-T1-GE3, features two N-Channel MOSFETs in a surface mount 8-SOIC package. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C. The device exhibits a low on-resistance (Rds On) of 16mOhm maximum at 5A and 10V, with a gate charge (Qg) of 62nC maximum at 10V and input capacitance (Ciss) of 2070pF maximum at 15V. The maximum power dissipation is 3.1W. This MOSFET array is suitable for applications in power management and switching circuits within the automotive and industrial sectors. The SI4922BDY-T1-GE3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2070pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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