SI4922BDY-T1-E3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4922BDY-T1-E3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 8A at 25°C. The low on-resistance, with a maximum of 16mOhm at 5A and 10V Vgs, contributes to reduced power loss and improved thermal performance, with a maximum power dissipation of 3.1W. Key characteristics include a gate charge (Qg) of 62nC at 10V and an input capacitance (Ciss) of 2070pF at 15V. The device is housed in an 8-SOIC package with surface mount technology, suitable for automated assembly. Operating across a temperature range of -55°C to 150°C, the SI4922BDY-T1-E3 is commonly utilized in automotive, industrial, and consumer electronics power management solutions. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2070pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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