SI4920DY-T1-GE3
MOSFET 2N-CH 30V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4920DY-T1-GE3 is a 2 N-channel MOSFET array designed for efficient power switching applications. This device features a 30V drain-to-source voltage (Vdss) and a low on-resistance of 25mOhm at 6.9A and 10V Vgs. The logic level gate operation and a maximum gate charge of 23nC at 5V Vgs facilitate lower drive power requirements. Rated for 2W maximum power dissipation, it is housed in an 8-SOIC package suitable for surface mounting. Operating across a wide temperature range of -55°C to 150°C (TJ), this component is commonly utilized in automotive and industrial power management systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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