SI4920DY-T1-E3
MOSFET 2N-CH 30V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4920DY-T1-E3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a low Rds(on) of 25mOhm at 6.9A and 10V, ensuring minimal conduction losses. The logic-level gate design simplifies drive requirements, with a Vgs(th) of 1V at 250µA. With a maximum continuous drain current capability and a maximum power dissipation of 2W, this MOSFET is suitable for power management solutions. The 8-SOIC package, measuring 3.90mm in width, is designed for surface mounting and is supplied on a tape and reel. This device is commonly found in industrial power supplies, automotive electronics, and consumer electronics, where space-constrained designs demand high efficiency and performance. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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