SI4916DY-T1-GE3
MOSFET 2N-CH 30V 10A/10.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® MOSFET array, part number SI4916DY-T1-GE3. This 8-SOIC package features two N-channel MOSFETs configured as a half-bridge. Each channel offers a 30V drain-source breakdown voltage. The continuous drain current (Id) is rated at 10A and 10.5A at 25°C, with a maximum power dissipation of 3.3W and 3.5W respectively. Key electrical characteristics include a maximum on-resistance (Rds On) of 18mOhm at 10A and 10V, and a logic level gate drive with a threshold voltage (Vgs(th)) of 3V at 250µA. Gate charge (Qg) is a maximum of 10nC at 4.5V. This component is designed for surface mount applications and operates across a temperature range of -55°C to 150°C. It is commonly utilized in power management solutions and automotive applications. Supplied in tape and reel packaging.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.3W, 3.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 10.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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