SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A/10.5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® SI4916DY-T1-E3 is a dual N-channel MOSFET array designed for demanding power applications. This component features a 30V Drain-Source Voltage (Vdss) and offers continuous drain currents of 10A and 10.5A respectively for the two channels. The device boasts a low Rds(on) of 18mOhm at 10A and 10V, contributing to efficient power management with maximum power dissipation rated at 3.3W and 3.5W. Featuring logic-level gate drive, it is suitable for integration with lower voltage control signals. The SI4916DY-T1-E3 is supplied in a compact 8-SOIC package suitable for surface mounting and operates across a wide temperature range from -55°C to 150°C. This MOSFET array finds application in power conversion, battery management, and motor control systems.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.3W, 3.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 10.5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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