SI4914DY-T1-E3
MOSFET 2N-CH 30V 5.5A/5.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® SI4914DY-T1-E3 is a 2 N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-source voltage rating and continuous drain currents of 5.5A and 5.7A at 25°C. The array offers low on-resistance of 23mOhm at 7A and 10V, with a maximum power dissipation of 1.1W and 1.16W. It is packaged in a standard 8-SOIC (0.154", 3.90mm Width) for surface mounting and operates across a temperature range of -55°C to 150°C. Key specifications include a logic level gate, a gate charge of 8.5nC at 4.5V, and a threshold voltage of 2.5V at 250µA. This device is commonly utilized in consumer electronics and industrial power management systems.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W, 1.16W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A, 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI4816BDY-T1-E3
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
SIA817EDJ-T1-GE3
MOSFET P-CH 30V 4.5A PPAK SC70-6
SIA811ADJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6
