SI4914BDY-T1-GE3
MOSFET 2N-CH 30V 8.4A/8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® series dual N-channel MOSFET array, part number SI4914BDY-T1-GE3. This device offers a 30V drain-source breakdown voltage and continuous drain current ratings of 8.4A and 8A at 25°C. The array features low on-resistance of 21mOhm maximum at 8A, 10V, and a gate charge of 10.5nC maximum at 4.5V. With a threshold voltage of 2.7V maximum at 250µA, this MOSFET array is suitable for power management applications in the automotive and industrial sectors. The component is housed in an 8-SOIC package and is supplied on tape and reel. Maximum power dissipation is 2.7W and 3.1W for the respective channels. Operating temperature range is -55°C to 150°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.7W, 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A, 8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | 8-SOIC |
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